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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD31CG
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450702MJD31CG ImageAMI Semiconductor / ON Semiconductor

MJD31CG

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Reference Price(In US Dollars)

In stock
1+
$0.50
75+
$0.399
150+
$0.32
525+
$0.251
1050+
$0.194
Inquiry Online
Specifications
  • Part Number
    MJD31CG
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 100V 3A DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJD31CG.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    1.2V @ 375mA, 3A
  • Transistor Type
    NPN
  • Supplier Device Package
    DPAK
  • Series
    -
  • Power - Max
    1.56W
  • Packaging
    Tube
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    MJD31CG-ND
    MJD31CGOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    3MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 3A, 4V
  • Current - Collector Cutoff (Max)
    50µA
  • Current - Collector (Ic) (Max)
    3A
  • Base Part Number
    MJD31

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