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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD5731T4G
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5185544MJD5731T4G ImageON Semiconductor

MJD5731T4G

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Reference Price(In US Dollars)

In stock
1+
$0.70
10+
$0.619
100+
$0.475
500+
$0.375
1000+
$0.30
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Specifications
  • Part Number
    MJD5731T4G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 350V 1A DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJD5731T4G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    1A
  • Voltage - Breakdown
    DPAK-3
  • Vce Saturation (Max) @ Ib, Ic
    350V
  • Series
    -
  • RoHS Status
    Digi-Reel®
  • Resistor - Base (R1) (Ohms)
    10MHz
  • Power - Max
    1.56W
  • Polarization
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    MJD5731T4GOSDKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    6 Weeks
  • Manufacturer Part Number
    MJD5731T4G
  • Frequency - Transition
    30 @ 300mA, 10V
  • Expanded Description
    Bipolar (BJT) Transistor PNP 350V 1A 10MHz 1.56W Surface Mount DPAK-3
  • Description
    TRANS PNP 350V 1A DPAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100µA
  • Current - Collector Cutoff (Max)
    1V @ 200mA, 1A
  • Current - Collector (Ic) (Max)
    PNP

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