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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE270G
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757476MJE270G ImageAMI Semiconductor / ON Semiconductor

MJE270G

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Reference Price(In US Dollars)

In stock
1+
$0.66
10+
$0.562
100+
$0.42
500+
$0.33
1000+
$0.255
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Specifications
  • Part Number
    MJE270G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 100V 2A TO225AA
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJE270G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 1.2mA, 120mA
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    TO-225AA
  • Series
    -
  • Power - Max
    1.5W
  • Packaging
    Bulk
  • Package / Case
    TO-225AA, TO-126-3
  • Other Names
    MJE270GOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    9 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    6MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 100V 2A 6MHz 1.5W Through Hole TO-225AA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1500 @ 120mA, 10V
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    2A

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