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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE5851G
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6013301MJE5851G ImageAMI Semiconductor / ON Semiconductor

MJE5851G

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Reference Price(In US Dollars)

In stock
1+
$3.05
50+
$2.585
100+
$2.202
500+
$1.809
1000+
$1.499
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Specifications
  • Part Number
    MJE5851G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 350V 8A TO220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJE5851G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    350V
  • Vce Saturation (Max) @ Ib, Ic
    5V @ 3A, 8A
  • Transistor Type
    PNP
  • Supplier Device Package
    TO-220AB
  • Series
    SWITCHMODE™
  • Power - Max
    80W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    MJE5851GOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor PNP 350V 8A 80W Through Hole TO-220AB
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    5 @ 5A, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    8A

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