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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJH11020G
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4838482MJH11020G ImageAMI Semiconductor / ON Semiconductor

MJH11020G

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Reference Price(In US Dollars)

In stock
1+
$3.66
30+
$3.111
120+
$2.696
510+
$2.295
1020+
$1.936
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Specifications
  • Part Number
    MJH11020G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 200V 15A TO247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJH11020G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    200V
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 150mA, 15A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    TO-247
  • Series
    -
  • Power - Max
    150W
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    MJH11020GOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    12 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    3MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 200V 15A 3MHz 150W Through Hole TO-247
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    400 @ 10A, 5V
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    15A

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