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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > MUN5112T1G
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6864310MUN5112T1G ImageAMI Semiconductor / ON Semiconductor

MUN5112T1G

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Reference Price(In US Dollars)

In stock
1+
$0.16
10+
$0.151
100+
$0.082
500+
$0.05
1000+
$0.034
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Specifications
  • Part Number
    MUN5112T1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS PNP 202MW SC70-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MUN5112T1G.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300µA, 10mA
  • Transistor Type
    PNP - Pre-Biased
  • Supplier Device Package
    SC-70-3 (SOT323)
  • Series
    -
  • Resistor - Emitter Base (R2)
    22 kOhms
  • Resistor - Base (R1)
    22 kOhms
  • Power - Max
    202mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SC-70, SOT-323
  • Other Names
    MUN5112T1GOSCT
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    21 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 202mW Surface Mount SC-70-3 (SOT323)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    MUN51**T

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