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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > MVB50P03HDLT4G
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MVB50P03HDLT4G

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Specifications
  • Part Number
    MVB50P03HDLT4G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    INTEGRATED CIRCUIT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MVB50P03HDLT4G.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Vgs (Max)
    ±15V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D2PAK-3
  • Series
    Automotive, AEC-Q101
  • Rds On (Max) @ Id, Vgs
    25 mOhm @ 25A, 5V
  • Power Dissipation (Max)
    125W (Tc)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4.9nF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    100nC @ 5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    P-Channel 30V 50A (Tc) 125W (Tc) Surface Mount D2PAK-3
  • Current - Continuous Drain (Id) @ 25°C
    50A (Tc)

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