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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NDBA100N10BT4H
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2562412NDBA100N10BT4H ImageAMI Semiconductor / ON Semiconductor

NDBA100N10BT4H

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Specifications
  • Part Number
    NDBA100N10BT4H
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 100A DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NDBA100N10BT4H.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D²PAK (TO-263)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    6.9 mOhm @ 50A, 15V
  • Power Dissipation (Max)
    110W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2950pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V, 15V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 100A (Ta) 110W (Tc) Surface Mount D²PAK (TO-263)
  • Current - Continuous Drain (Id) @ 25°C
    100A (Ta)

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