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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > NGTB05N60R2DT4G
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5727353NGTB05N60R2DT4G ImageAMI Semiconductor / ON Semiconductor

NGTB05N60R2DT4G

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Reference Price(In US Dollars)

In stock
2500+
$0.431
5000+
$0.411
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Specifications
  • Part Number
    NGTB05N60R2DT4G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 5A 600V DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NGTB05N60R2DT4G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 5A
  • Test Condition
    300V, 5A, 30 Ohm, 15V
  • Td (on/off) @ 25°C
    44ns/82ns
  • Switching Energy
    188µJ (on), 60µJ (off)
  • Supplier Device Package
    DPAK
  • Series
    -
  • Reverse Recovery Time (trr)
    70ns
  • Power - Max
    56W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    NGTB05N60R2DT4GOSTR
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    5 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    -
  • Gate Charge
    30nC
  • Detailed Description
    IGBT 600V 16A 56W Surface Mount DPAK
  • Current - Collector Pulsed (Icm)
    20A
  • Current - Collector (Ic) (Max)
    16A

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