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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NSS20101JT1G
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6194151NSS20101JT1G ImageAMI Semiconductor / ON Semiconductor

NSS20101JT1G

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Reference Price(In US Dollars)

In stock
3000+
$0.064
6000+
$0.056
15000+
$0.047
30000+
$0.045
75000+
$0.042
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Specifications
  • Part Number
    NSS20101JT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 20V 1A SC-89
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSS20101JT1G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    20V
  • Vce Saturation (Max) @ Ib, Ic
    220mV @ 100mA, 1A
  • Transistor Type
    NPN
  • Supplier Device Package
    SC-89-3
  • Series
    -
  • Power - Max
    300mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-89, SOT-490
  • Other Names
    NSS20101JT1G-ND
    NSS20101JT1GOSTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    44 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    350MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 20V 1A 350MHz 300mW Surface Mount SC-89-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 100mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    1A
  • Base Part Number
    NSS20101

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