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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NSV1C301ET4G-VF01
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1300021NSV1C301ET4G-VF01 ImageAMI Semiconductor / ON Semiconductor

NSV1C301ET4G-VF01

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Reference Price(In US Dollars)

In stock
2500+
$0.318
5000+
$0.296
12500+
$0.293
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Specifications
  • Part Number
    NSV1C301ET4G-VF01
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 100V 3A 3DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSV1C301ET4G-VF01.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300mA, 3A
  • Transistor Type
    NPN
  • Supplier Device Package
    DPAK
  • Series
    -
  • Power - Max
    2.1W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    NSV1C301ET4G
    NSV1C301ET4G-ND
    NSV1C301ET4G-VF01-ND
    NSV1C301ET4G-VF01OSTR
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    19 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    120MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount DPAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 1A, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    3A

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