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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > NSVMMUN2232LT3G
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6173324NSVMMUN2232LT3G ImageAMI Semiconductor / ON Semiconductor

NSVMMUN2232LT3G

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Reference Price(In US Dollars)

In stock
10000+
$0.055
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Specifications
  • Part Number
    NSVMMUN2232LT3G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 0.246W SOT23
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NSVMMUN2232LT3G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 1mA, 10mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Series
    -
  • Resistor - Emitter Base (R2)
    4.7 kOhms
  • Resistor - Base (R1)
    4.7 kOhms
  • Power - Max
    246mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    36 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    15 @ 5mA, 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA

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