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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTD3055L104-1G
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1021670NTD3055L104-1G ImageAMI Semiconductor / ON Semiconductor

NTD3055L104-1G

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Reference Price(In US Dollars)

In stock
1+
$0.70
75+
$0.545
150+
$0.475
525+
$0.352
1050+
$0.282
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Specifications
  • Part Number
    NTD3055L104-1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 12A IPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTD3055L104-1G.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Vgs (Max)
    ±15V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I-PAK
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    104 mOhm @ 6A, 5V
  • Power Dissipation (Max)
    1.5W (Ta), 48W (Tj)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Other Names
    NTD3055L104-1G-ND
    NTD3055L104-1GOS
    NTD3055L1041G
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    14 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    440pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Through Hole I-PAK
  • Current - Continuous Drain (Id) @ 25°C
    12A (Ta)

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