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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTD4860NA-35G
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5936982NTD4860NA-35G ImageAMI Semiconductor / ON Semiconductor

NTD4860NA-35G

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Specifications
  • Part Number
    NTD4860NA-35G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 25V 65A IPAK TRIMMED
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTD4860NA-35G.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    I-PAK
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    7.5 mOhm @ 30A, 10V
  • Power Dissipation (Max)
    1.28W (Ta), 50W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Stub Leads, IPak
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1308pF @ 12V
  • Gate Charge (Qg) (Max) @ Vgs
    21.8nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drain to Source Voltage (Vdss)
    25V
  • Detailed Description
    N-Channel 25V 10.4A (Ta), 65A (Tc) 1.28W (Ta), 50W (Tc) Through Hole I-PAK
  • Current - Continuous Drain (Id) @ 25°C
    10.4A (Ta), 65A (Tc)

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