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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTD4909NT4G

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NTD4909NT4G Image

AMI Semiconductor / ON Semiconductor

NTD4909NT4G

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Reference Price(In US Dollars)

In stock

2500+

$0.261

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Specifications

Part Number

NTD4909NT4G
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 30V 8.8A SGL DPAK
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

NTD4909NT4G.pdf
ECAD Model
Vgs(th) (Max) @ Id

2.2V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

DPAK
Series

-
Rds On (Max) @ Id, Vgs

8 mOhm @ 30A, 10V
Power Dissipation (Max)

1.37W (Ta), 29.4W (Tc)
Packaging

Tape & Reel (TR)
Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names

NTD4909NT4G-ND
NTD4909NT4GOSTR
Operating Temperature

-55°C ~ 175°C (TJ)
Mounting Type

Surface Mount
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Manufacturer Standard Lead Time

5 Weeks
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

1314pF @ 15V
Gate Charge (Qg) (Max) @ Vgs

17.5nC @ 10V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V
Drain to Source Voltage (Vdss)

30V
Detailed Description

N-Channel 30V 8.8A (Ta), 41A (Tc) 1.37W (Ta), 29.4W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C

8.8A (Ta), 41A (Tc)

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