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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTE4153NT1G
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7056413NTE4153NT1G ImageAMI Semiconductor / ON Semiconductor

NTE4153NT1G

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Reference Price(In US Dollars)

In stock
3000+
$0.097
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Specifications
  • Part Number
    NTE4153NT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 20V 915MA SC-89
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTE4153NT1G.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1.1V @ 250µA
  • Vgs (Max)
    ±6V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SC-89-3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    230 mOhm @ 600mA, 4.5V
  • Power Dissipation (Max)
    300mW (Tj)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-89, SOT-490
  • Other Names
    NTE4153NT1GOSTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    39 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    110pF @ 16V
  • Gate Charge (Qg) (Max) @ Vgs
    1.82nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    N-Channel 20V 915mA (Ta) 300mW (Tj) Surface Mount SC-89-3
  • Current - Continuous Drain (Id) @ 25°C
    915mA (Ta)

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