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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > NTMD4N03R2G
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5550049

NTMD4N03R2G

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Reference Price(In US Dollars)

In stock
1+
$0.78
10+
$0.655
100+
$0.491
500+
$0.36
1000+
$0.278
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Specifications
  • Part Number
    NTMD4N03R2G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 30V 4A 8SOIC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NTMD4N03R2G.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Supplier Device Package
    8-SOIC
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    60 mOhm @ 4A, 10V
  • Power - Max
    2W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    NTMD4N03R2GOSCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    32 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 10V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 30V 4A 2W Surface Mount 8-SOIC
  • Current - Continuous Drain (Id) @ 25°C
    4A
  • Base Part Number
    NTMD4N03

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