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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTP65N02R

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NTP65N02R Image

AMI Semiconductor / ON Semiconductor

NTP65N02R

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Specifications

Part Number

NTP65N02R
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 25V 7.6A TO220AB
Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant
Datasheets

NTP65N02R.pdf
Vgs(th) (Max) @ Id

2V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

TO-220AB
Series

-
Rds On (Max) @ Id, Vgs

10.5 mOhm @ 20A, 10V
Power Dissipation (Max)

1.04W (Ta), 62.5W (Tc)
Packaging

Tube
Package / Case

TO-220-3
Other Names

NTP65N02ROS
Operating Temperature

-55°C ~ 150°C (TJ)
Mounting Type

Through Hole
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds

1330pF @ 20V
Gate Charge (Qg) (Max) @ Vgs

9.5nC @ 4.5V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V
Drain to Source Voltage (Vdss)

25V
Detailed Description

N-Channel 25V 7.6A (Ta), 58A (Tc) 1.04W (Ta), 62.5W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C

7.6A (Ta), 58A (Tc)

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