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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NVC3S5A51PLZT1G
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5310721NVC3S5A51PLZT1G ImageAMI Semiconductor / ON Semiconductor

NVC3S5A51PLZT1G

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Reference Price(In US Dollars)

In stock
3000+
$0.255
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Specifications
  • Part Number
    NVC3S5A51PLZT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CHANNEL 60V 1.8A 3-CPH
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NVC3S5A51PLZT1G.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.6V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    3-CPH
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    250 mOhm @ 1A, 10V
  • Power Dissipation (Max)
    1.2W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    NVC3S5A51PLZT1G-ND
    NVC3S5A51PLZT1GOSTR
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    12 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    262pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    6nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    P-Channel 60V 1.8A (Ta) 1.2W (Ta) Surface Mount 3-CPH
  • Current - Continuous Drain (Id) @ 25°C
    1.8A (Ta)

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