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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NVD4809NT4G
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6520592NVD4809NT4G ImageAMI Semiconductor / ON Semiconductor

NVD4809NT4G

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Specifications
  • Part Number
    NVD4809NT4G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V 58A DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NVD4809NT4G.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    DPAK
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    9 mOhm @ 30A, 10V
  • Power Dissipation (Max)
    1.4W (Ta), 52W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1456pF @ 12V
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 11.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 11.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 9.6A (Ta), 58A (Tc) 1.4W (Ta), 52W (Tc) Surface Mount DPAK
  • Current - Continuous Drain (Id) @ 25°C
    9.6A (Ta), 58A (Tc)

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