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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NVGS5120PT1G
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NVGS5120PT1G

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Reference Price(In US Dollars)

In stock
1+
$1.09
10+
$0.954
100+
$0.736
500+
$0.545
1000+
$0.436
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Specifications
  • Part Number
    NVGS5120PT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 60V 1.8A 6TSOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NVGS5120PT1G.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    6-TSOP
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    111 mOhm @ 2.9A, 10V
  • Power Dissipation (Max)
    600mW (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-23-6
  • Other Names
    NVGS5120PT1GOSCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    35 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    942pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    18.1nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    P-Channel 60V 1.8A (Ta) 600mW (Ta) Surface Mount 6-TSOP
  • Current - Continuous Drain (Id) @ 25°C
    1.8A (Ta)

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