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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > NVMFD5C650NLT1G
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2360749NVMFD5C650NLT1G ImageAMI Semiconductor / ON Semiconductor

NVMFD5C650NLT1G

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Reference Price(In US Dollars)

In stock
1500+
$0.989
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Specifications
  • Part Number
    NVMFD5C650NLT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 60V 111A S08FL
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NVMFD5C650NLT1G.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.2V @ 98µA
  • Supplier Device Package
    8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Series
    Automotive, AEC-Q101
  • Rds On (Max) @ Id, Vgs
    4.2 mOhm @ 20A, 10V
  • Power - Max
    3.5W (Ta), 125W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerTDFN
  • Other Names
    NVMFD5C650NLT1G-ND
    NVMFD5C650NLT1GOSTR
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    50 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2546pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 4.5V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 60V 21A (Ta), 111A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Current - Continuous Drain (Id) @ 25°C
    21A (Ta), 111A (Tc)

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