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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NVMFS5113PLWFT1G
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2177503NVMFS5113PLWFT1G ImageAMI Semiconductor / ON Semiconductor

NVMFS5113PLWFT1G

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Reference Price(In US Dollars)

In stock
1500+
$0.836
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Specifications
  • Part Number
    NVMFS5113PLWFT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    NFET SO8FL 60V 69A 16MOHM
  • Lead Free Status / RoHS Status
  • Datasheets
    NVMFS5113PLWFT1G.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    5-DFN (5x6) (8-SOFL)
  • Series
    Automotive, AEC-Q101
  • Rds On (Max) @ Id, Vgs
    14 mOhm @ 17A, 10V
  • Power Dissipation (Max)
    3.8W (Ta), 150W (Tc)
  • Package / Case
    8-PowerTDFN, 5 Leads
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Manufacturer Standard Lead Time
    44 Weeks
  • Lead Free Status
    Lead free
  • Input Capacitance (Ciss) (Max) @ Vds
    4400pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    83nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    P-Channel 60V 10A (Ta), 64A (Tc) 3.8W (Ta), 150W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
  • Current - Continuous Drain (Id) @ 25°C
    10A (Ta), 64A (Tc)

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