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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > TIP112G
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1441239TIP112G ImageAMI Semiconductor / ON Semiconductor

TIP112G

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Reference Price(In US Dollars)

In stock
1+
$0.66
50+
$0.524
100+
$0.419
500+
$0.329
1000+
$0.254
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Specifications
  • Part Number
    TIP112G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 100V 2A TO220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    TIP112G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    2.5V @ 8mA, 2A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Power - Max
    2W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    TIP112GOS
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 100V 2A 2W Through Hole TO-220AB
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 1A, 4V
  • Current - Collector Cutoff (Max)
    2mA
  • Current - Collector (Ic) (Max)
    2A
  • Base Part Number
    TIP11*

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