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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > JANTXV2N4150
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3938955JANTXV2N4150 ImageAeroflex (MACOM Technology Solutions)

JANTXV2N4150

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Reference Price(In US Dollars)

In stock
1+
$22.75
10+
$20.685
100+
$17.582
Inquiry Online
Specifications
  • Part Number
    JANTXV2N4150
  • Manufacturer/Brand
    Aeroflex (MACOM Technology Solutions)
  • Stock Quantity
    In stock
  • Description
    DIODE
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    JANTXV2N4150.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    70V
  • Vce Saturation (Max) @ Ib, Ic
    2.5V @ 1A, 10A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-5
  • Series
    Military, MIL-PRF-19500/394
  • Power - Max
    160W
  • Packaging
    Bulk
  • Package / Case
    TO-205AA, TO-5-3 Metal Can
  • Other Names
    1657-1224
    1657-1224-MIL
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 70V 10A 160W Through Hole TO-5
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 5A, 5V
  • Current - Collector Cutoff (Max)
    10µA
  • Current - Collector (Ic) (Max)
    10A

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