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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > AOB25S65L
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2610095AOB25S65L ImageAlpha and Omega Semiconductor, Inc.

AOB25S65L

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Reference Price(In US Dollars)

In stock
1+
$3.96
10+
$3.533
100+
$2.897
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Specifications
  • Part Number
    AOB25S65L
  • Manufacturer/Brand
    Alpha and Omega Semiconductor, Inc.
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 25A TO263
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.AOB25S65L.pdf
    2.AOB25S65L.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-263 (D²Pak)
  • Series
    aMOS™
  • Rds On (Max) @ Id, Vgs
    190 mOhm @ 12.5A, 10V
  • Power Dissipation (Max)
    357W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    785-1539-1
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    26 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1278pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    26.4nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 25A (Tc) 357W (Tc) Surface Mount TO-263 (D²Pak)
  • Current - Continuous Drain (Id) @ 25°C
    25A (Tc)

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