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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > AT-41535G
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AT-41535G

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Specifications
  • Part Number
    AT-41535G
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANSISTOR NPN BIPOLAR 35MICRO-X
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Transistor Type
    NPN
  • Supplier Device Package
    35 micro-X
  • Series
    -
  • Power - Max
    500mW
  • Packaging
    Bulk
  • Package / Case
    4-SMD (35 micro-X)
  • Operating Temperature
    150°C (TJ)
  • Noise Figure (dB Typ @ f)
    1.3dB ~ 3dB @ 1GHz ~ 4GHz
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gain
    10dB ~ 18dB
  • Frequency - Transition
    8GHz
  • Detailed Description
    RF Transistor NPN 12V 60mA 8GHz 500mW Surface Mount 35 micro-X
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 10mA, 8V
  • Current - Collector (Ic) (Max)
    60mA
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