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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N3019
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23066402N3019 ImageCentral Semiconductor

2N3019

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Reference Price(In US Dollars)

In stock
1+
$2.21
10+
$1.999
25+
$1.785
100+
$1.607
250+
$1.428
500+
$1.25
Inquiry Online
Specifications
  • Part Number
    2N3019
  • Manufacturer/Brand
    Central Semiconductor
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 80V 1A
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2N3019.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-39
  • Series
    -
  • Power - Max
    800mW
  • Packaging
    Bulk
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Other Names
    2N3019CC
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 80V 1A 100MHz 800mW Through Hole TO-39
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA, 10V
  • Current - Collector Cutoff (Max)
    10nA (ICBO)
  • Current - Collector (Ic) (Max)
    1A

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