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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > CP647-MJ11015-CT
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CP647-MJ11015-CT

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Specifications
  • Part Number
    CP647-MJ11015-CT
  • Manufacturer/Brand
    Central Semiconductor
  • Stock Quantity
    In stock
  • Description
    TRANS PNP DARL 30A 120V DIE
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    CP647-MJ11015-CT.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    120V
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 300mA, 30A
  • Transistor Type
    PNP - Darlington
  • Supplier Device Package
    Die
  • Series
    -
  • Packaging
    Tray
  • Package / Case
    Die
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor PNP - Darlington 120V 30A Surface Mount Die
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 30A, 5V
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    30A

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