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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > BC856AS-7
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4936368BC856AS-7 ImageDiodes Incorporated

BC856AS-7

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Reference Price(In US Dollars)

In stock
3000+
$0.051
6000+
$0.044
15000+
$0.037
30000+
$0.035
75000+
$0.033
150000+
$0.029
Inquiry Online
Specifications
  • Part Number
    BC856AS-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS 2PNP 65V 0.1A SOT363
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BC856AS-7.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    65V
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Transistor Type
    2 PNP (Dual)
  • Supplier Device Package
    SOT-363
  • Series
    -
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    BC856AS7
    BC856ASDITR
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    100MHz
  • Detailed Description
    Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 200mW Surface Mount SOT-363
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    125 @ 2mA, 5V
  • Current - Collector Cutoff (Max)
    15nA
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    BC856AS

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