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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BC856BW-7-F
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3526009BC856BW-7-F ImageDiodes Incorporated

BC856BW-7-F

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Reference Price(In US Dollars)

In stock
3000+
$0.038
6000+
$0.033
15000+
$0.028
30000+
$0.026
75000+
$0.025
150000+
$0.021
Inquiry Online
Specifications
  • Part Number
    BC856BW-7-F
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 65V 0.1A SC70-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BC856BW-7-F.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    65V
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Transistor Type
    PNP
  • Supplier Device Package
    SOT-323
  • Series
    -
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-70, SOT-323
  • Other Names
    BC856BW-FDITR
    BC856BW7F
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 65V 100mA 200MHz 200mW Surface Mount SOT-323
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    220 @ 2mA, 5V
  • Current - Collector Cutoff (Max)
    15nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    BC856BW

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