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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > DMN21D2UFB-7B
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3542192DMN21D2UFB-7B ImageDiodes Incorporated

DMN21D2UFB-7B

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Reference Price(In US Dollars)

In stock
1+
$0.49
10+
$0.347
100+
$0.228
500+
$0.135
1000+
$0.104
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Specifications
  • Part Number
    DMN21D2UFB-7B
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 20V 0.76A 3DFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DMN21D2UFB-7B.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1V @ 250µA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    3-DFN1006 (1.0x0.6)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    990 mOhm @ 100mA, 4.5V
  • Power Dissipation (Max)
    380mW (Ta)
  • Packaging
    Original-Reel®
  • Package / Case
    3-UFDFN
  • Other Names
    DMN21D2UFB-7BDIDKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    27.6pF @ 16V
  • Gate Charge (Qg) (Max) @ Vgs
    0.93nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    N-Channel 20V 760mA (Ta) 380mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6)
  • Current - Continuous Drain (Id) @ 25°C
    760mA (Ta)

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