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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > DSM80101M-7
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5233825DSM80101M-7 ImageDiodes Incorporated

DSM80101M-7

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Reference Price(In US Dollars)

In stock
3000+
$0.174
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Specifications
  • Part Number
    DSM80101M-7
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 80V 0.5A SOT26
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    DSM80101M-7.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 10mA, 100mA
  • Transistor Type
    NPN + Diode (Isolated)
  • Supplier Device Package
    SOT-26
  • Series
    -
  • Power - Max
    600mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-23-6
  • Other Names
    DSM80101M-7DITR
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN + Diode (Isolated) 80V 500mA 600mW Surface Mount SOT-26
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 10mA, 1V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    500mA

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