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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > MIMD10A-7-F
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4154875MIMD10A-7-F ImageDiodes Incorporated

MIMD10A-7-F

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Reference Price(In US Dollars)

In stock
3000+
$0.109
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Specifications
  • Part Number
    MIMD10A-7-F
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN/PNP SOT363
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MIMD10A-7-F.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    SOT-363
  • Series
    -
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    100 Ohms, 10 kOhms
  • Power - Max
    200mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    250MHz, 200MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA, 500mA 250MHz, 200MHz 200mW Surface Mount SOT-363
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    100mA, 500mA
  • Base Part Number
    MD10A

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