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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > ZXTN5551GTA
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4523394ZXTN5551GTA ImageDiodes Incorporated

ZXTN5551GTA

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Reference Price(In US Dollars)

In stock
1+
$0.50
10+
$0.425
100+
$0.317
500+
$0.249
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Specifications
  • Part Number
    ZXTN5551GTA
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 160V 0.6A SOT223
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    ZXTN5551GTA.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    160V
  • Vce Saturation (Max) @ Ib, Ic
    200mV @ 5mA, 50mA
  • Transistor Type
    NPN
  • Supplier Device Package
    SOT-223
  • Series
    -
  • Power - Max
    2W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-261-4, TO-261AA
  • Other Names
    ZXTN5551GCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    20 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    130MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 160V 600mA 130MHz 2W Surface Mount SOT-223
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    50nA (ICBO)
  • Current - Collector (Ic) (Max)
    600mA
  • Base Part Number
    ZXTN5551

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