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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFD120
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5770022IRFD120 ImageElectro-Films (EFI) / Vishay

IRFD120

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Specifications
  • Part Number
    IRFD120
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 1.3A 4-DIP
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    IRFD120.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    4-DIP, Hexdip, HVMDIP
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    270 mOhm @ 780mA, 10V
  • Power Dissipation (Max)
    1.3W (Ta)
  • Packaging
    Tube
  • Package / Case
    4-DIP (0.300", 7.62mm)
  • Other Names
    *IRFD120
    IRFD121
    IRFD122
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    360pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
  • Current - Continuous Drain (Id) @ 25°C
    1.3A (Ta)

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