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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI1011X-T1-GE3
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3250085SI1011X-T1-GE3 ImageElectro-Films (EFI) / Vishay

SI1011X-T1-GE3

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Specifications
  • Part Number
    SI1011X-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 12V SC-89
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI1011X-T1-GE3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    800mV @ 250µA
  • Vgs (Max)
    ±5V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SC-89-3
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    640 mOhm @ 400mA, 4.5V
  • Power Dissipation (Max)
    190mW (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SC-89, SOT-490
  • Other Names
    SI1011X-T1-GE3TR
    SI1011XT1GE3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    62pF @ 6V
  • Gate Charge (Qg) (Max) @ Vgs
    4nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.2V, 4.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Detailed Description
    P-Channel 12V 190mW (Ta) Surface Mount SC-89-3
  • Current - Continuous Drain (Id) @ 25°C
    -

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