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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI1029X-T1-GE3
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3446260SI1029X-T1-GE3 ImageElectro-Films (EFI) / Vishay

SI1029X-T1-GE3

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Reference Price(In US Dollars)

In stock
1+
$0.62
10+
$0.521
100+
$0.391
500+
$0.287
1000+
$0.222
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Specifications
  • Part Number
    SI1029X-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N/P-CH 60V SC89-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI1029X-T1-GE3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Supplier Device Package
    SC-89-6
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    1.4 Ohm @ 500mA, 10V
  • Power - Max
    250mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    SI1029X-T1-GE3CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    33 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    30pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    0.75nC @ 4.5V
  • FET Type
    N and P-Channel
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    Mosfet Array N and P-Channel 60V 305mA, 190mA 250mW Surface Mount SC-89-6
  • Current - Continuous Drain (Id) @ 25°C
    305mA, 190mA
  • Base Part Number
    SI1029

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