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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4459BDY-T1-GE3
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SI4459BDY-T1-GE3

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Reference Price(In US Dollars)

In stock
1+
$1.41
10+
$1.248
100+
$0.987
500+
$0.765
1000+
$0.604
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Specifications
  • Part Number
    SI4459BDY-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CHAN 30V SO-8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI4459BDY-T1-GE3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.2V @ 250µA
  • Vgs (Max)
    +20V, -16V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-SO
  • Series
    TrenchFET® Gen IV
  • Rds On (Max) @ Id, Vgs
    4.9 mOhm @ 15A, 10V
  • Power Dissipation (Max)
    3.1W (Ta), 5.6W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    SI4459BDY-T1-GE3CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    32 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3490pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    84nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    P-Channel 30V 20.5A (Ta), 27.8A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SO
  • Current - Continuous Drain (Id) @ 25°C
    20.5A (Ta), 27.8A (Tc)

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