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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4599DY-T1-GE3
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4235701

SI4599DY-T1-GE3

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Reference Price(In US Dollars)

In stock
1+
$1.09
10+
$0.954
100+
$0.736
500+
$0.545
1000+
$0.436
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Specifications
  • Part Number
    SI4599DY-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N/P-CH 40V 6.8A 8SOIC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI4599DY-T1-GE3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Supplier Device Package
    8-SO
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    35.5 mOhm @ 5A, 10V
  • Power - Max
    3W, 3.1W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    SI4599DY-T1-GE3CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    640pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • FET Type
    N and P-Channel
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    40V
  • Detailed Description
    Mosfet Array N and P-Channel 40V 6.8A, 5.8A 3W, 3.1W Surface Mount 8-SO
  • Current - Continuous Drain (Id) @ 25°C
    6.8A, 5.8A
  • Base Part Number
    SI4599

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