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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4966DY-T1-E3
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SI4966DY-T1-E3

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Reference Price(In US Dollars)

In stock
2500+
$0.893
Inquiry Online
Specifications
  • Part Number
    SI4966DY-T1-E3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 20V 8SOIC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI4966DY-T1-E3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Supplier Device Package
    8-SO
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    25 mOhm @ 7.1A, 4.5V
  • Power - Max
    2W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    SI4966DY-T1-E3-ND
    SI4966DY-T1-E3TR
    SI4966DYT1E3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 4.5V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 20V 2W Surface Mount 8-SO
  • Current - Continuous Drain (Id) @ 25°C
    -
  • Base Part Number
    SI4966

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