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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI8469DB-T2-E1
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1357911SI8469DB-T2-E1 ImageElectro-Films (EFI) / Vishay

SI8469DB-T2-E1

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Specifications
  • Part Number
    SI8469DB-T2-E1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 8V 3.6A MICRO
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    800mV @ 250µA
  • Vgs (Max)
    ±5V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    64 mOhm @ 1.5A, 4.5V
  • Power Dissipation (Max)
    780mW (Ta), 1.8W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    4-UFBGA
  • Other Names
    SI8469DB-T2-E1CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    900pF @ 4V
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V
  • Drain to Source Voltage (Vdss)
    8V
  • Detailed Description
    P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount
  • Current - Continuous Drain (Id) @ 25°C
    4.6A (Ta)
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