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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI8816EDB-T2-E1
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5275079SI8816EDB-T2-E1 ImageElectro-Films (EFI) / Vishay

SI8816EDB-T2-E1

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Reference Price(In US Dollars)

In stock
1+
$0.67
10+
$0.526
100+
$0.361
500+
$0.247
1000+
$0.185
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Specifications
  • Part Number
    SI8816EDB-T2-E1
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V MICRO FOOT
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI8816EDB-T2-E1.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1.4V @ 250µA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    4-Microfoot
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    109 mOhm @ 1A, 10V
  • Power Dissipation (Max)
    500mW (Ta)
  • Packaging
    Original-Reel®
  • Package / Case
    4-XFBGA
  • Other Names
    SI8816EDB-T2-E1DKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    46 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    195pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    8nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot
  • Current - Continuous Drain (Id) @ 25°C
    -

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