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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIA416DJ-T1-GE3
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744574SIA416DJ-T1-GE3 ImageElectro-Films (EFI) / Vishay

SIA416DJ-T1-GE3

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Reference Price(In US Dollars)

In stock
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$0.30
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Specifications
  • Part Number
    SIA416DJ-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 11.3A SC70-6L
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SIA416DJ-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PowerPAK® SC-70-6 Single
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    83 mOhm @ 3.2A, 10V
  • Power Dissipation (Max)
    3.5W (Ta), 19W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    PowerPAK® SC-70-6
  • Other Names
    SIA416DJ-T1-GE3TR
    SIA416DJT1GE3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    295pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
  • Current - Continuous Drain (Id) @ 25°C
    11.3A (Tc)

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