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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHB30N60E-GE3
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935780SIHB30N60E-GE3 ImageElectro-Films (EFI) / Vishay

SIHB30N60E-GE3

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Reference Price(In US Dollars)

In stock
1000+
$3.861
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Specifications
  • Part Number
    SIHB30N60E-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 29A D2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SIHB30N60E-GE3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    D2PAK
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    125 mOhm @ 15A, 10V
  • Power Dissipation (Max)
    250W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    SIHB30N60EGE3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2600pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 29A (Tc) 250W (Tc) Surface Mount D2PAK
  • Current - Continuous Drain (Id) @ 25°C
    29A (Tc)

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