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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIS892DN-T1-GE3
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1963491SIS892DN-T1-GE3 ImageElectro-Films (EFI) / Vishay

SIS892DN-T1-GE3

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Reference Price(In US Dollars)

In stock
3000+
$0.741
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Specifications
  • Part Number
    SIS892DN-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 30A 1212-8 PPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SIS892DN-T1-GE3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PowerPAK® 1212-8
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    29 mOhm @ 10A, 10V
  • Power Dissipation (Max)
    3.7W (Ta), 52W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    PowerPAK® 1212-8
  • Other Names
    SIS892DN-T1-GE3TR
    SIS892DNT1GE3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    611pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    21.5nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
  • Current - Continuous Drain (Id) @ 25°C
    30A (Tc)

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