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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SQJ200EP-T1_GE3
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3288617SQJ200EP-T1_GE3 ImageElectro-Films (EFI) / Vishay

SQJ200EP-T1_GE3

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Reference Price(In US Dollars)

In stock
1+
$1.19
10+
$1.058
100+
$0.836
500+
$0.648
1000+
$0.512
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Specifications
  • Part Number
    SQJ200EP-T1_GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 20V 20A/60A PPAK SO
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SQJ200EP-T1_GE3.pdf
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Supplier Device Package
    PowerPAK® SO-8 Dual Asymmetric
  • Series
    Automotive, AEC-Q101, TrenchFET®
  • Rds On (Max) @ Id, Vgs
    8.8 mOhm @ 16A, 10V
  • Power - Max
    27W, 48W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    PowerPAK® SO-8 Dual
  • Other Names
    SQJ200EP-T1_GE3CT
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    975pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 10V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 20V 20A, 60A 27W, 48W Surface Mount PowerPAK® SO-8 Dual Asymmetric
  • Current - Continuous Drain (Id) @ 25°C
    20A, 60A

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