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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SUD09P10-195-GE3
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4114751SUD09P10-195-GE3 ImageElectro-Films (EFI) / Vishay

SUD09P10-195-GE3

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Reference Price(In US Dollars)

In stock
1+
$1.04
10+
$0.918
100+
$0.726
500+
$0.563
1000+
$0.444
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Specifications
  • Part Number
    SUD09P10-195-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 100V 8.8A DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SUD09P10-195-GE3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-252, (D-Pak)
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    195 mOhm @ 3.6A, 10V
  • Power Dissipation (Max)
    2.5W (Ta), 32.1W (Tc)
  • Packaging
    Original-Reel®
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    SUD09P10-195-GE3DKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    33 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1055pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    34.8nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    P-Channel 100V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252, (D-Pak)
  • Current - Continuous Drain (Id) @ 25°C
    8.8A (Tc)

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