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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SUP85N10-10-E3
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4732509SUP85N10-10-E3 ImageElectro-Films (EFI) / Vishay

SUP85N10-10-E3

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Reference Price(In US Dollars)

In stock
1+
$7.66
10+
$6.843
100+
$5.611
500+
$4.543
1000+
$3.832
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Specifications
  • Part Number
    SUP85N10-10-E3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 85A TO220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.SUP85N10-10-E3.pdf
    2.SUP85N10-10-E3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220AB
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    10.5 mOhm @ 30A, 10V
  • Power Dissipation (Max)
    3.75W (Ta), 250W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-220-3
  • Other Names
    SUP85N10-10-E3CT
    SUP85N10-10-E3CT-ND
    SUP85N1010E3
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    33 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    6550pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    160nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole TO-220AB
  • Current - Continuous Drain (Id) @ 25°C
    85A (Tc)

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