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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GA08JT17-247
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5260174GA08JT17-247 ImageGeneSiC Semiconductor

GA08JT17-247

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Reference Price(In US Dollars)

In stock
1+
$57.53
10+
$54.15
30+
$50.765
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Specifications
  • Part Number
    GA08JT17-247
  • Manufacturer/Brand
    GeneSiC Semiconductor
  • Stock Quantity
    In stock
  • Description
    TRANS SJT 1700V 8A TO-247AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    GA08JT17-247.pdf
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    -
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Supplier Device Package
    TO-247AB
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    250 mOhm @ 8A
  • Power Dissipation (Max)
    48W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    1242-1135
    GA08JT17247
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    18 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • FET Type
    -
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Drain to Source Voltage (Vdss)
    1700V
  • Detailed Description
    1700V 8A (Tc) (90°C) 48W (Tc) Through Hole TO-247AB
  • Current - Continuous Drain (Id) @ 25°C
    8A (Tc) (90°C)

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